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Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm
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Enhanced optical absorption in conformally grown MoS2 layers on SiO2/Si substrates with SiO2 nanopillars with a height of 50 nm - Nanoscale Advances (RSC Publishing)
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Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control - ScienceDirect
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